Using Azo Photoisomerization to Alter Semiconductor Film Properties

Generally semiconductor devices like transistors have fixed properties, but using an azobenzene (Azo) compound it’s possible to optically alter these properties by exposing them to UV light. This is demonstrated in a recent paper by [Jaehoon Ji] et al., as published in Science Advances, with accompanying coverage by Princeton University. Building on previous research on e.g. flakes of MoS2 with photochromic Azo molecules, a functional semiconductor device was created. This uses a transition metal dichalcogenide (TMD) monolayer combined with the Azo compound, with the latter altering the electrical and optical properties of the structure. In both n- and p-type FET semiconductors it was demonstrated using visible and UV light that this can alter the carrier densities in the material, effectively altering the FET’s behavior. While this is of course just a proof of concept, it does show that by using (Azo) molecules that can respond to certain electromagnetic radiation frequencies, electric fields, temperature, etc. semiconductor devices can be created whose behavior dynamically changes with these factors. This could potentially provide new ways to make programmable circuits and sensors. Please be kind and respectful to help make the comments section excellent. (Comment Policy)